Terahertz-wave detector on silicon carbide platform

Shock-wave strength properties of boron carbide and silicon carbide

Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides

T. Baehr-Jones,* M. Hochberg, Richard Soref, and A. Scherer Department of Applied Physics, California Institute of Technology, 1200 E California Boulevard, Pasadena, California 91125 Air Force Research Laboratory Sensors Directorate, Electromagnetic Technology Division, 80 Scott Drive, Hanscom Air Force Base, Bedford, Massachusetts 01731-2909 E-mail: [email protected] *Corresponding author: ...

Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a very low residual stress level (-25 to 100 MPa). T...

Observation of Shear Wave Generation at Bonded Silicon- Carbide Interface

The drive toward higher efficiencies and performance in energy production and transportation equipment has posed a continual challenge for the materials scientists and engineers involved in design and construction of such equipment. The laws of thermodynamics specify that increased efficiency can best be achieved by the use of the highest possible temperatures. As the desired operating temperat...